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 RB160M-90
Diodes
Schottky barrier diode
RB160M-90
Applications General rectification Dimensions (Unit : mm)
1.60.1 0.10.1 0.05
Land size figure (Unit : mm)
1.2 0.85
2.60.1
3.50.2
Features 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability.
PMDU
Structure Construction Silicon epitaxial planar
0.90.1
ROHM : PMDU JEDEC :SOD-123 Manufacture Date
0.80.1
Taping specifications (Unit : mm)
4.00.1 2.00.05 1.550.05 1.750.1 0.250.05
3.50.05
8.00.2
1.810.1
4.00.1
1.00.1
3.710.1 1.5MAX
Absolute maximum ratings (Ta=25C)
Param eter Revers e voltage (repetitive peak) Revers e voltagec(DC) Average rectified forward current Forward current s urge peak 60Hz 1cyc Junction tem perature Storage tem perature Mounted on epoxy board. 180 Harf s ine wave Sym bol VRM VR Io IFSM Tj Ts tg Lim its 90 90 1 30 150 -40 to +150 Unit V V A A
Electrical characteristics (Ta=25C)
Param eter Forward voltage Revers e current Sym bol VF IR Min. Typ. Max. 0.73 100 Unit V A IF =1.0A VR =90V Conditions
3.05
Rev.B
1/3
RB160M-90
Diodes
Electrical characteristic curves (Ta=25C)
1 Ta=75 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=125 0.1 Ta=150 Ta=25 Ta=-25 Ta=150 10000 1000 Ta=75 100 10 1 0.1 0.01 0 100 200 300 400 500 600 700 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS Ta=25 Ta=125 1000
f=1MHz
f=1MHz
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
100
0.01
Ta=-25
10
0.001 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
650 FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) Ta=25 IF=1A n=30pcs
100 90 80 70 60 50 40 30 20 10 0 VF DISPERSION MAP IR DISPERSION MAP
AVE:478.3nA :36.1612nA
200
CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 Ta=25 VR=90V VR=100V n=30pcs n=30pcs
190 180 170 160 150 140 130 120 110 100
Ct DISPERSION MAP
640
Ta=25 f=1MHz VR=0V n=10pcs
630 AVE:632.1mV 620
AVE:149.6pF
610
AVE:4.655uA
600
200 RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 1cyc 8.3ms 100
30
100 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 50
150
Ifsm
25
20
15
AVE:7.40ns
10
50 AVE:56.0A 0 IFSM DISRESION MAP
5
0
0 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
150
Ifsm
1000
Mounted on epoxy board IM=10mA IF=0.5A
2
Rth(j-a)
t
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
100
1ms
time
1.5 FORWARD POWER DISSIPATION:Pf(W)
Rth(j-c)
100
300us
10
1
D=1/2 Sin(180)
DC
50
1
0.5
0 0.1 1 10 100
TIME:t(ms) IFSM-t CHARACTERISTICS
0.1
0.001 0.01 0.1 1 10 100 1000
0 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2
TIME:t(s) Rth-t CHARACTERISTICS
Rev.B
2/3
RB160M-90
Diodes
1 0.8 REVERSE POWER DISSIPATION:PR (W) 0.6 DC 0.4 0.2 0 0 10 20 30 40 50 60 Sin(180) 70 80 90 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta) 150 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 150 D=1/2 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 D=1/2 1 0.5 Sin(180) 0A 0V DC Io t T VR D=t/T VR=45V Tj=150 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 2.5 2 1.5 D=1/2 1 0.5 Sin(180)
3 0A 0V DC Io t T VR D=t/T VR=45V Tj=150
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
30 25 20 15 10 5 0 AVE:1.70kV AVE:10.7kV
ELECTROSTATIC DISCHARGE TEST ESD(KV)
C=200pF R=0
C=100pF R=1.5k
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


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